1–3 von 3 Ergebnissen
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    Manufacture of Sb-based type H strained layer superlattice focal plane arrays

    Tidrow, Meimei Z. / Zheng, Lucy / Barcikowski, Hank et al. | Tema Archiv | 2009
    . Most current infrared military systems use mercury-cadmium-telluride (HgCdTe), a II-VI semiconductor material, for long-wavelength (LW) (8 to ...
    Verlag: GaAs MANTECH , Beaverton

    Wide-bandgap semiconductor devices for automobile applications

    Ueda, H. / Sugimoto, M. / Uesugi, T. et al. | Tema Archiv | 2006
    Verlag: GaAs MANTECH , St. Louis

    Development of an on-wafer test for rapid evaluation of doping spike carrier concentration levels in commercially manufactured GaAs Gunn diodes for automotive radar applications

    Farrington, N. / Carr, M. / Sly, J.L. et al. | Tema Archiv | 2008
    time-consuming and costly device fabrication before results can be fed back. This paper discusses the development of on-wafer quasiplanar Gunn ...
    Verlag: GaAs MANTECH , St. Louis