1–14 von 14 Ergebnissen
|

    Enhanced gain-bandwidth product and performance in thin heterostructure avalanche photodiodes

    Kwon, O.-H. / Sun, P. / Hayat, M.M. et al. | IEEE | 2003
    In this paper, the initial-energy and bandgap-boundary mechanisms are shown to improve the gain-bandwidth product (GBP) beyond the limits ...
    Verlag: IEEE

    In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As SACM APDs for single photon detection

    Karve, G. / Zheng, X. / Holmes, A.L. et al. | IEEE | 2003
    0.53/Ga/sub 0.47/As absorption and In/sub 0.52/Al/sub 0.48/As multiplication layer. The operating parameters such as temperature, excess bias ...
    Verlag: IEEE

    Low dark current 4H-SiC avalanche photodiodes

    Guo, X. / Beck, A. / Yang, B. et al. | IEEE | 2003
    In this paper, we study the mechanisms of the 4H-SiC avalanche photodiode (APD) dark current and find that the mesa sidewall leakage ...
    Verlag: IEEE

    High-saturation-current charge-compensated InGaAs/InP uni-traveling-carrier photodiode

    Li, N. / Li, X. / Demiguel, S. et al. | IEEE | 2003
    layer is demonstrated. A 16 /spl mu/m diameter photodiode has demonstrated an output current of 80 mA and a bandwidth of 30 GHz. ...
    Verlag: IEEE

    The HgCdTe electron avalanche photodiode

    Beck, J.D. / Wan, C.-F. / Kinch, M.A. et al. | IEEE | 2003
    being made for the relevant scattering mechanisms of both electrons and holes. These theoretical arguments justify proposition, based on ...
    Verlag: IEEE

    High-speed optical receivers in advanced silicon technologies

    Schaub, J.D. / Csutak, S.M. / Yang, B. et al. | IEEE | 2002
    We discuss the prospects for receiver arrays based on advanced Si CMOS and SiGe HBT technology and will review the recent demonstrations of ...
    Verlag: IEEE

    Normal-incidence quantum dot infrared photodetectors

    Zhonghui Chen, / Zhengmao Ye, / Eui-Tae Kim, et al. | IEEE | 2002
    We report on normal-incidence single and dual-wavelength intraband infrared photodetectors (with contacts in the vertical configuration ...
    Verlag: IEEE

    Low-noise InP-based avalanche photodiodes with an impact-ionization-engineered multiplication region

    Wang, S. / Hurst, J.B. / Ma, F. et al. | IEEE | 2002
    We report the direct growth of impact-ionization engineering (I/sub 2/E) structures using InAlAs and InAlGaAs quaternary in the ...
    Verlag: IEEE

    On the optimization of heterostructure avalanche photodiodes

    Kwon, O.-H. / Hayat, M.M. / Wang, S. et al. | IEEE | 2002
    We use the modified dead-space multiplication theory (MDSMT) that incorporates both the initial energy effect and the heterostructure ...
    Verlag: IEEE

    UV/blue GaP avalanche photodiodes

    Beck, A.L. / Collins, C.J. / Wang, S. et al. | IEEE | 2002
    Gallium phosphide, though most commonly used in emitters, has potential for use in both ultraviolet, blue, and blue green light detection ...
    Verlag: IEEE

    10 Gbps all silicon APD optical receiver

    Yang, B. / Schaub, J.D. / Csutak, S.M. et al. | IEEE | 2002
    Verlag: IEEE

    Bias-dependent dual-spectral InAs/In/sub 0.15/Ga/sub 0.85/As quantum dot infrared photodetectors

    Zhengmao Ye, / Campbell, J.C. | IEEE | 2001
    epitaxy (MBE). This QDIP sample consisted of five stacks of InAs pyramidal QDs capped by InGaAs and sandwiched between heavily-doped GaAs layers ...
    Verlag: IEEE

    High-speed, low-noise resonant-cavity avalanche photodiodes

    Hui Nie, / Anselm, K.A. / Hu, C. et al. | IEEE | 1996
    In this paper we describe a separate absorption and multiplication (SAM) avalanche photodiode (APD) in a resonant-cavity configuration ...
    Verlag: IEEE