InP-based InGaAs PIN millimeter-wave diodes were used to design and fabricate monolithic integrated transmit-receive switches for W-band automotive applications. Coplanar-waveguide InGaAs PIN diode technology with reduced parasitics was employed for fabricating MMICs and yielded switches with high isolation and low insertion loss as shown by the performance of W-band single-pole double-throw switches. 77 GHz SPDT switches demonstrated less than 1.35 dB insertion loss, more than 43 dB input-to-output isolation, and more than 30 dB output-to-output crosstalk. W-band on-wafer large-signal characterization revealed no degradation of performance when the input power was increased to the maximum available level of +11 dBm.


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    Titel :

    77 GHz high-isolation coplanar transmit-receive switch using InGaAs/InP PIN diodes


    Beteiligte:
    Alekseev, E. (Autor:in) / Pavlidis, D. (Autor:in) / Ziegler, V. (Autor:in) / Berg, M. (Autor:in) / Dickmann, J. (Autor:in)


    Erscheinungsdatum :

    1998


    Format / Umfang :

    4 Seiten, 4 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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