The effects of radiation on InP solar cells is reviewed. included are: a performance overview comparing InP, GaAs and silicon cells under laboratory irradiations, space flight data, defect studies using both electron paramagnetic resonance and deep level transient spectroscopy, carrier removal, thermal and minority carrier injection annealing and lifetime and diffusion length radiation damage coefficients. A discussion of the primary reason for the superior performance, under irradiation, of InP solar cells is followed by an exposition of the barrier problems requiring solution before InP can be considered for widespread use in space.
Radiation damage in InP solar cells
Strahlungsschädigung von InP-Sonnenzellen
Solar Cells ; 31 , 4 ; 331-348
1991
18 Seiten, 60 Quellen
Aufsatz (Zeitschrift)
Englisch
INDIUMPHOSPHID , GALLIUMARSENID , SILICIUM , LADUNGSTRAEGERINJEKTION , PARAMAGNETISCHE RESONANZ , GAMMA-STRAHLUNG , PROTONENSTRAHL , DIFFUSIONSLAENGE , RAUMFAHRTTECHNIK , LADUNGSTRAEGERLEBENSDAUER , DLTS-SPEKTROSKOPIE , DREI-FUENF-VERBINDUNG , MINORITAETSTRAEGER , SONNENBATTERIE , ELEKTRONENBESTRAHLUNG , GALLIUM , ARSENID , LADUNGSTRAEGER (PHYSIK) , INJEKTION , RAUMFAHRTINDUSTRIE , LEBENSDAUER , SONNENENERGIE , ELEKTRISCHE BATTERIE , ELEKTRON , BESTRAHLUNG , INDIUMVERBINDUNG , UEBERSICHT , GAMMABESTRAHLUNG , TEMPERN , THERMAL ANNEALING
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