Describes the operating principles and performance of a gas handling system, which was designed specifically for the metalorganic molecular beam epitaxy (MOMBE) growth of III-V compound semiconductors. The system employs three-parameter control (carrier flow, reagent vapor pressure and bubbler pressure) to deliver a stable and reproducible flow of each metalorganic reagent. This approach permits a very wide range of reagent flux to be conveniently accessed. This flux can be exactly predicted, using a modification to the simple theoretical expression that has been used previously. Data for the repeated growth of GaAs FET structures show that the growth rate is stable and has an excellent day-to-day reproducibility. A novel compensated vent/run gas switching system is used to eliminate pressure transients that can otherwise occur when switching the reagent gases in and out of the MOMBE growth chamber


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