Preorbit and in-orbit test panel results are presented. The test panel contained three types of solar cell: GaAs/Ge, GaAs, and silicon. The test results showed anomalies in tracking the cell performance in ground tests and into orbit. There was also in-orbit degradation greater than that expected from the radiation models used for the LIPS-3 orbit. With these reservations, the GaAs/Ge cell performance confirmed recent advances in explaining the electrical performance of these cells. Both the GaAs/Ge and GaAs cells have deeper p-n junction depths than current cells, and this probably caused some of the in-orbit degradation. For the silicon cells, the in-orbit degradation was greater than expected for their design and may have been affected by mechanical factors in panel assembly or mounting on the satellite.


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    Titel :

    ASEC/Air Force LIPS-3 test panel results


    Weitere Titelangaben:

    Ergebnis von Weltraumversuchen mit GaAsGe-, GaAs- und Si-Solarzellen


    Beteiligte:
    Iles, P.A. (Autor:in) / Chang, K.I. (Autor:in) / Ling, K.S. (Autor:in) / Chu, C. (Autor:in) / Wise, J. (Autor:in) / Morris, R.K. (Autor:in)


    Erscheinungsdatum :

    1988


    Format / Umfang :

    5 Seiten


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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