Basic mechanisms and ground-test data for radiation effects in solid-state-imagers are reviewed, with a special emphasis on proton-induced effects on silicon charge-coupled devices (CCDs). For the proton fluxes encountered in the space environment, both transient ionization and displacement damage effects arise from single-particle interactions. In the former case, individual proton tracks will be seen: in the latter, dark-current spikes (or hot pixels) and trapping states that cause degradation in charge-transfer efficiency will be observed. Proton-induced displacement damage effects on dark current and charge transfer are considered in detail, and the practical implications for shielding, device hardening, and ground testing are discussed.
Proton effects in charge-coupled devices
Protoneneffekte in ladungsgekoppelten Schaltungen
IEEE Transactions on Nuclear Science ; 43 , 2 Part I ; 614-627
1996
14 Seiten, 12 Bilder, 1 Tabelle, 76 Quellen
Aufsatz (Zeitschrift)
Englisch
ladungsgekoppeltes Bauelement , CCD-Bildwandler , Proton , Strahlungsbelastung , Strahlungsfestigkeit , ionisierende Strahlung , Raumfahrt , Weltraum , Ionisation , Dunkelstrom , Wechselwirkung , Ladungsübertragung , MOS-Schaltung , Stromdichte , Gate-Oxid , Strahlungsschädigung , Ionisationsenergie , Infrarotdetektor , Haftstelle (Trapping) , Rauscheigenschaft , Quecksilber-Cadmium-Tellurid , Bildpunkt , Vorhersage
NTRS | 1992
|Imaging with Charge-Coupled Devices
AIAA | 1977
|Imaging with charge-coupled devices
AIAA | 1976
|Isolation Mounting for Charge-Coupled Devices
NTRS | 1985
|