Ionizing radiation has been a problem for space-system microelectronics from the earliest satellites. Much progress has been made in understanding the physical mechanisms that cause total-dose-induced failure, and this knowledge has been applied to hardened-technology development. Many of the hardened technologies are no longer available, however, and hence more commercial off-the-shelf components are being used. This situation presents a challenge for system designers, since the commercial parts typically have lower failure levels and larger variability in response. In addition, recent studies have uncovered new challenges for total-doses hardness assurance in the form of 1) an enhanced low dose-rate sensitivity of bipolar linear microcircuits, 2) an effect of burn in on CMOS microcircuit total-dose response, and 3) an enhanced effect of plastic packaging on the burned-in effect for CMOS circuits. These issues will be addressed as they relate to the space-system ionizing radiation environment.
Total-dose issues for microelectronics in space systems
Totaldosiswert für die Mikroelektronik in Raumfahrtsystemen
IEEE Transactions on Nuclear Science ; 43 , 2 Part I ; 442-452
1996
11 Seiten, 13 Bilder, 1 Tabelle, 43 Quellen
Aufsatz (Zeitschrift)
Englisch
Mikroelektronik , komplementäre MOS-Schaltung , CMOS-Technik , Strahlungsdosis , Strahlungsbelastung , Kunststoffgehäuse , Bipolarschaltung , Ionisation , ionisierende Strahlung , Satellit , Gate-Oxid , Haftstelle (Trapping) , Strahlungsfestigkeit , Raumfahrzeug , NASA (National Aeronautics and Space Administration) , MOS-FET , Ladungsträgerdichte , Ladungsverteilung
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