Integrated magneto resistance (MR) sensors were developed which use not only a bridge circuit but also integrating technique with semiconductors. They have four or more elements used for magneto electric transducer. Previously, such kind of integrated magnetic sensors used to have magnetic-electric transducers in the form of bridge circuit by MR elements only. Hence, the amplitude of sensor's output solely depended on the magneto resistance change ratio of the MR elements. In the newly developed MR sensors it is 3.7 times more effective than the conventional ones. Thin film that reveals large magneto resistance often has defect such as large saturation field, magneto-striction, low resistivity, etc. However, by means of NiFe thin film and specific integrating technique, these new MR sensors showed excellent temperature characteristics up to 150 deg C.
Integrated MR sensors for automobile
Integrierte magnetfeldabhängige Widerstandssensoren für Kraftfahrzeuge
IEEE Transactions on Magnetics ; 30 , 6,1 ; 4617-4619
1994
3 Seiten, Bilder, 4 Quellen
Aufsatz (Zeitschrift)
Englisch
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