Infrared thinfilm emitters are used in a wide range of applications due to their high output power of 470 mW at 1 A driving current (1mm2-chip emitting at 850 nm). But some applications not only need high power but also a low swit-ching time (high modulation bandwidth) which is usually a tradeoff. In this paper we present new chip designs, which made it possible for the first time to decouple efficiency and switching time for a wide range of parameters. The optical power could be increased up to 603 mW by keeping the switching time constant. For a further increase of the optical power a chip is presented for high pulse-current applications up to 5 A with an optical power up to 2.7 W. At the roll-off-current 20 A the output power is 7.4 W. Pulse life tests at 7,5 A up to 3000 h show the good reliability. Stacking active areas is another possibility to enhance radiation densi-ty. An optical output power up to 4.4 W at 5 A is demonstrated for a two-fold stack.


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    Titel :

    New Infrared Light Emitting Diodes (LED) for high brightness, low switching time and high pulse-current capability


    Weitere Titelangaben:

    Neue Infrarot lichtemittierende Diode (LED) für hohe Leuchtdichte, kurze Schaltzeit und hohe Impulsstromfähigkeit


    Beteiligte:
    Baur, E. (Autor:in) / Sundgren, P. (Autor:in) / Hofmann, C. (Autor:in) / Moosburger, J. (Autor:in) / Altieri-Weimar, P. (Autor:in) / Sabathil, M. (Autor:in) / Heidborn, P. (Autor:in) / Wiengarten, M. (Autor:in) / Jäger, C. (Autor:in) / Wutz, O. (Autor:in)


    Erscheinungsdatum :

    2009


    Format / Umfang :

    10 Seiten, 9 Bilder, 4 Quellen



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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