The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the about 300 deg C effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 deg C operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 C operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 deg C to 500 deg C is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages.


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    Titel :

    6H-SiC transistor integrated circuits demonstrating prolonged operation at 500 deg C


    Weitere Titelangaben:

    Integrierte Schaltungen mit 6H-SiC-Transistoren demonstrieren Dauerbetrieb bei 500 Grad C


    Beteiligte:
    Neudeck, Philip G. (Autor:in) / Spry, David J. (Autor:in) / Chen, Liang-Yu (Autor:in) / Chang, Carl W. (Autor:in) / Beheim, Glenn M. (Autor:in) / Okojie, Robert S. (Autor:in) / Evans, Laura J. (Autor:in) / Meredith, Roger (Autor:in) / Ferrier, Terry (Autor:in) / Krasowski, Michael J. (Autor:in)


    Erscheinungsdatum :

    2008


    Format / Umfang :

    8 Seiten, 8 Bilder, 26 Quellen



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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