The improvement of self-clamped inductive switching (SCIS) capability of ignition IGBT widely used in automotive coil driver ensures the protection of the ignition IGBT from a severe thermal stress under the abnormal switching condition such as the open secondary. We have proposed and verified a new self-clamping scheme for improving the self-clamped inductive switching (SCIS) capability of ignition IGBT by employing the collector coupled turn-on of IGBT. The proposed self-clamped IGBT has an additional power MOSFET connected between the gate and collector of main IGBT with a large gate resistance. The additional power MOSFET is turned-on temporarily at the beginning of the self-clamping mode, which increases the collector voltage of main IGBT gradually so that the proposed self-clamped IGBT reduces the hard switching energy loss, which results in improvement of the SCIS capability of main IGBT.


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    Titel :

    A new soft self-clamping scheme for improving the self-clamped inductive switching (SCIS) capability of automotive ignition IGBT


    Beteiligte:
    Ji, In-Hwan (Autor:in) / Cho, Kyu-Heon (Autor:in) / Lee, Seung-Chul (Autor:in) / Kim, Soo-Seong (Autor:in) / Oh, Kwang-Hoon (Autor:in) / Yun, Chong-Man (Autor:in) / Han, Min-Koo (Autor:in)


    Erscheinungsdatum :

    2007


    Format / Umfang :

    4 Seiten, 5 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch





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