Previous research efforts have demonstrated small area (0.04 cm2) GaAs on Si (GaAs/Si) solar cells with AM0 efficiencies in excess of 17 %. These results were achieved on Si substrates coated with a step-graded buffer of Si(x)Ge(1-x) alloys graded to 100 % Ge. Recently, a 100-fold increase in device area was accomplished for these devices in preparation for on-orbit testing of this technology aboard Materials International Space Station Experiment number 5 (MISSE5). The GaAs/Si MISSE5 experiment contains several GaAs/Si test devices as well as GaAs/GaAs control devices. Electrical performance data, measured on-orbit will be telemetered to ground stations daily. After approximately one year on orbit, the MISSE5 payload will be returned to earth for post flight evaluation. Ground based thermal cycling, equivalent to one year in LEO, of GaAs/Si solar cells has been accomplished with no detectable degradation in cell performance. GaAs/Si temperature coefficients and angle of incidence coefficients have been measured. The continued development of GaAs/Si holds the potential for >20 % AM0 conversion efficiency.
Leo testing of GaAs on Si solar cells aboard misse5
2004
4 Seiten, 8 Bilder, 2 Tabellen, 6 Quellen
Aufsatz (Konferenz)
Englisch
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