AlGaAn/GaN heterojunction field effect transistors (HFET) on sapphire substrates have demonstrated ability as power devices operating with high current densities and high breakdown voltages. Additionally, AlGaN/GaN HFET devices have a very low on-state resistance. This makes these devices ideal for automotive applications such as switching relays, DC-DC converters, and power inverters. By 2006, switching devices using GaN-based FETs are anticipated to be employed in luxury automobiles and transitioned to the mass market by 2009. In this presentation, data from AlGaN/GaN HFET's grown in an Emcore D 180 MOCVD system will be presented. Typical production-scale material results (on 2'' sapphire substrates) for these wafers were: my (similar to) 1000 cm2/Vs, Ns = 1.0 x 1013 cm-2, and Rs (similar to) 450 Omega/square with <3% variation across of wafer. These wafers were then processed into devices using Pt/Au gate contacts with 2 my m gate length, 200 my m gate width, and a source to drain spacing of 13 my m. A total of 1000 FETs were combined in parallel for an effective gate width of 20 cm for high current operation (10A). These devices have a lower on-state resistance (<0.01 Omega-cm2) and higher Schottky breakdown voltages (400 V) than the theoretical limit of Si MOSFET devices. These devices demonstrate suitability for insertion in automotive electrical harnesses.


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    Titel :

    AlGaN/GaN HFETs for automotive applications


    Beteiligte:
    Birkhahn, R. (Autor:in) / Gotthold, D. (Autor:in) / Cauffman, N. (Autor:in) / Peres, B. (Autor:in) / Yoshida, S. (Autor:in)


    Erscheinungsdatum :

    2002


    Format / Umfang :

    4 Seiten, 6 Quellen



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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