To choice the most effective morphology for solar cells application this paper is devoted to the investigation of the effect of the type and geometrical parameters of the metal/GaAs interface microrelief morphology on optical and electronic parameters of barrier structure, its solar energy conversion efficiency and radiation resistance under 60.Co gamma-irradiation. The investigated photodiode structures were fabricated by simultaneous vacuum evaporation of semitransparent gold film on the flat (chemically polished) and microtextured (by wet chemical anisotropic etching) (100) surfaces of n-GaAs with Nd nearly equal to 3x1016 cm-3. The concentrated HNO3 and the mixture of 2HF:2H2SO4:1H2O2 were used to prepare the microrelief of dendrite-like and quasigrating type, correspondingly. It has been shown by these investigations that the interface microrefief of quasigrating morphology of metal/GaAs barrier structures is more effective for solar cells application than the dendrite-like one. It provides greater open-circuit voltage, fill factor, and correspondingly, efficiency than the last one at equal short-circuit current densities. Moreover, the parameters of structures with quasigrating microrelief stay nearly invariable under gamma-irradiation up to dose of 2x105 Gy.
Choice of interface microrelief morphology for GaAs surface barrier solar cells
Wahl der Mikroreliefmorphologie der Grenzfläche für GaAs-Oberflächenbarrieren-Solarzellen
2001
5 Seiten, 4 Bilder, 2 Tabellen, 4 Quellen
Aufsatz (Konferenz)
Englisch
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