Heterojunction HgCdTe detector chips are used in military and commercial focal plane array systems. These devices give improved performance because they are built with a wide bandgap semiconductor on top of a narrow bandgap semiconductor. Optimizing FPA performance with heterojunction detectors has posed problems because many of the HgCdTe material parameters vary as a function of composition, temperature and doping concentration. AET, with funding from the US Army Night Vision Labs, has developed a new simulator called IRSIM that automates the HgCdTe device analysis and design. This paper discusses the details of and operation of this simulator. IRSIM employs physics-based models and a two dimensional simulation grid and allows the engineer to use versatile geometries and material characteristics. The simulator then gives important HgCdTe diode information as outputs such as responsivity as a function of wavelength and current-voltage relationships. Graphical plots of a variety of detector outputs are automatically produced. Additionally, all output information can be generated as a statistical function of the material and design parameter variations. Heterojunction HgCdTe detectors have been fabricated using a liquid epitaxy technolog, and electrical parameters have been measured and compared to the predictions from IRSIM.
Focal plane array design using IR-SIM software system
2001
11 Seiten, 9 Quellen
Aufsatz (Konferenz)
Englisch
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