Flight data of GaAs space solar cells fabricated on Si substrates (GaAs/Si) are analyzed by comparing with the data of GaAs cells on GaAs substrates (GaAs/GaAs). The initial performance of the GaAs/Si cells is comparable to the GaAs/GaAs cells. Both types of cells are mounted on the body of the ETS-VI satellite, which has been highly irradiated due to its anomalous orbit. The cells are estimated to be irradiated about approximately 1016 cm-2 level of equivalent 1 MeV electrons at the end of the flight data collection. The independence of the radiation hardness of GaAs/Si cells with respect to the thickness of the cover glass has been shown from the flight data. Also, better performance of GaAs/Si cells compared to GaAs/GaAs cells has observed in the case when a thin (50 mu m) cover glass is used and the cells are highly irradiated. The characteristics of the GaAs/Si cells, in addition to taking advantage of its light-weight substrate, are considered to be effective advantage for space missions.


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    Titel :

    Flight degradation data of GaAs-on-Si solar cells mounted on highly irradiated ETS-VI (satellite)


    Beteiligte:
    Imaizumi, M. (Autor:in) / Anzawa, O. (Autor:in) / Matsuda, S. (Autor:in) / Yamaguchi, M. (Autor:in) / Ohara, T. (Autor:in)


    Erscheinungsdatum :

    2000


    Format / Umfang :

    4 Seiten, 4 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch






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