The stability of ZnO/CdS/Cu(In,Ga)Se2/Mo heterojunction solar cells for space applications is investigated by irradiation with 1 MeV electrons of fluences between 1x1014 to 5x1018 cm-2. Notable degradation of the solar cell performance starts at fluences of 1017 cm-2 where the open circuit voltage decreases by about 5 % while short circuit current and fill factor essentially remain unaffected. Thus, Cu(In,Ga)Se2 solar cells withstand electron fluences which are at least one order of magnitude higher when compared to other solar cell materials. Solar cells on light weight substrates such as 0.2 mm thin glass and 0.1 mm metal foil show the same stability as cells on standard soda lime glass. A model describes the absolute open circuit voltage loss considering the increase in space charge recombination by electron irradiation induced defects. Defect analysis by admittance spectroscopy shows that acceptor defects with an energy distance of approximately 0.3 eV from the valence band are generated at a rate of 0.017 +- 0.01 per cm.
Stability of Cu(In,Ga)Se2 thin film solar cells under 1 MeV electron radiation
2000
4 Seiten, 5 Bilder, 1 Tabelle, 14 Quellen
Aufsatz (Konferenz)
Englisch
Akzeptor (Fremdatom) , Cadmiumsulfid , Elektronenbeschuss , Galliumselenid , Gitterfehler , Glasfolie , Heteroübergang , Indium , Kupfer , Kurzschlussstrom , Leerlaufspannung , Mehrschichtschaltung , Metallfolie , Molybdän , Rekombinationsprozess , Scheinwiderstandsmessung , Selenid , Sonnenzelle , Störstellenzustand , Strahlungsbeständigkeit , Strahlungsdosis , Trägermaterial , Zinkoxid
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