This paper describes the novel approach adopting Silicon Nitride (Si3N4) ceramic substrate with Copper metal by reliable Active Metal Bonding (AMB) Method for high power inverter module substrate. Si3N4 material has a very high flexural strength and fracture toughness which are almost two times higher than that of the conventional AIN and Aluminum Oxide (AI2O3). By combining a new bonding technology, Copper metal of 0.5mm thickness can be attached on to Si3N4 without reducing the rehability. In comparison, AIN and Al2O3 have a limitation with attachment of less than 0.25mm thickness Copper. Simulation by Finite Element Method (FEM) and actual measurement of thermal performance by using heater chip have been conducted and it has been confirmed that Si3N4 with Copper plate by AMB method has equivalent and better thermal resistance to that of AIN with Copper plate. And by optimizing the layer structure and adopting the ceramic material's inherited mechanical strength, a temperature cycle test, at condition of -40 to 125 deg C, has proven to clear up to 3000 cycles. The results of this research produced a substrate with a low thermal resistance with high rehability. It will be applicable to the future generation Intelligent Power Module (IPM) which combine power and control circuit into one ceramic substrate with an efficient cooling structure. The detail of development and the result of thermal performance measurement and reliability tests will be fully discussed in the paper.
A novel approach of a high reliability ceramic substrate for EV/HEV inverter power module
Eine neue Lösung für hochzuverlässige Keramiksubstrate für die Umrichterleistungsmodule von Elektro- und Hybridfahrzeugen
2000
10 Seiten, 12 Bilder, 1 Tabelle, 2 Quellen
(nicht paginiert)
Aufsatz (Konferenz)
Datenträger
Englisch
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