Self-clamped inductive switching (SCIS) energy capability is the most important device parameter for insulated gate bipolar transistors (IGBTs) used in automotive ignition applications. We have experimentally characterized the dependence of IGBTs SCIS energy capability on the clamp voltage for an ambient temperature range of -50 to 175 degrees C. It is found that the SCIS energy of an IGBT increases by nearly 70% when the clamp voltage is reduced from 400 to 100 V. Such a significant increase is attributed to the lower maximum junction temperature that is reached in an IGBT with a lower clamp voltage during the SCIS testing. Two-dimensional (2-D) electrothermal device simulations have been performed to analyze such phenomena. The results provide critical information for device design and product development.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Voltage dependence of self-clamped inductive switching (SCIS) energy capability of IGBTs


    Beteiligte:
    Shen, Z.J. (Autor:in) / Briggs, D. (Autor:in) / Robb, S.P. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    2000


    Format / Umfang :

    4 Seiten, 4 Quellen




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch





    Sperical crystal imaging spectrometer (SCIS) for cosmic x-ray spectroscopy

    Schnopper, H.W. / Taylor, P.O. | Tema Archiv | 1980


    “Omega” Fin Design for Enhanced Cooling Capability on IGBTs

    Costello, Brian / Collins, Ryan | SAE Technical Papers | 2020


    Behavior model for series connected high voltage IGBTs

    Yu Sang, / Lu, Ting / Zhengming Zhao, et al. | IEEE | 2014


    A Dual Clamped AC-AC Converter based Inductive Charging System

    Dabkara, Monika / Jakhar, Anil / Verma, Arun Kumar | IEEE | 2021