Most MOS memories in military applications were specifically designed with just enough margin for high performance over the limited 0 C to +70 C temperature range. When the same devices are operated from -55 C to +125 C, they require significant relaxations in performance characteristics or fail to operate entirely. Although the system designer could reduce the magnitude of this problem by controlling the temperature inside the system, some semiconductor manufacturers are utilizing a more effective component innovation called the substrate bias generator, or 'charge pump', which is a useful tool in minimizing temperature degradation in static RAMs and ROMs, thus optimizing memory performance while reducing costs.


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    Titel :

    Substrate bias generator optimizes military MOS memories


    Weitere Titelangaben:

    Vorspannungserzeugung mit MOS-Speichern auf einem Substrat fuer militaerische Anwendungen


    Beteiligte:
    Huffman, D. (Autor:in) / Segers, D. (Autor:in) / Green, R. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1977


    Format / Umfang :

    3 Seiten


    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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