Within the scope of studies conducted at the Warsaw Technical University to find new, simple and cheap transducers with a strong output signal and measuring properties comparable with those of the transducers used hitherto, investigations have been started on the possibility of using for this purpose Si, GaAs and GaSb semiconductor p-n junctions. Presented paper reports the results of studies on the application of silicon, gallium arsenide and gallium antimonide p-n junctions as transducers of rapidly varying pressures up to 100 MPa in fuel pumps of Diesel engines. The dynamic error of the transducers based on Si and GaAs junctions was found to be 1.5 %.


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    Titel :

    Semiconductor transducers for measurement of rapidly varying pressures in automotive industry


    Weitere Titelangaben:

    Halbleiterwandler fuer die Messung von sich schnell aendernden Druecken in der Automobilindustrie


    Beteiligte:
    Wlodarski, W. (Autor:in) / Moeschke, B. (Autor:in)


    Erscheinungsdatum :

    1984


    Format / Umfang :

    5 Seiten, 8 Bilder, 3 Quellen


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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    `Current transducers for the automotive industry'

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    Westbrook, M.H. | Tema Archiv | 1988


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    Baatz, Wilfried | SAE Technical Papers | 1976


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    Baatz,W. / Floscan Instrument,US | Kraftfahrwesen | 1976