SiO2 covers as thick as 5 mils have been deposited directly on Si solar cells at temperatures below 150 Cel with rates above 0.8 mils per hour by a novel plasma activated CVD process. Covers above 2 mils thick deform the cells excessively but do not delaminate. Stresses have been lowered by mixing Al2O3 into the cover through alterations in the CVD reactant gas mixture. In space power systems, these integral covers have promise for reducing system weight while simplifying cell assembly.
Integral solar cell covers by plasma activated CVD
Integrale Abdeckungen fuer Sonnenzellen, die durch plasmaaktivierte chemische Abscheidung aus der Dampfphase hergestellt werden
1984
5 Seiten, 6 Bilder, 4 Tabellen, 2 Quellen
Aufsatz (Konferenz)
Englisch
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