Many military electronic systems have performance and radiation requirements that presently can only be satisfied by dielectrically isolated bipolar circuits. The radiation requirements typically include neutrons and ionizing radiation, both total dose and transient. This paper will discuss a junction-isolated alternative to the dielectric isolation process which also eliminates transient induced latch-up but without the concomitant penalties associated with the dielectric isolation process. The ionizing radiation total dose hardness will exceed 1 x 10(exp6) rads (Si.)
A transient hardened junction isolated bipolar technology
Trennschicht-Isolation-Bipolar-Bauelement Technologie: Widerstandsfaehigkeit bei Strahleneinfluss
IEEE Transactions on Nuclear Science ; 25 , 6/Dec. ; 1522-1524
1978
3 Seiten, 1 Bild, 1 Tabelle, 3 Quellen
Aufsatz (Zeitschrift)
Englisch
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