Many military electronic systems have performance and radiation requirements that presently can only be satisfied by dielectrically isolated bipolar circuits. The radiation requirements typically include neutrons and ionizing radiation, both total dose and transient. This paper will discuss a junction-isolated alternative to the dielectric isolation process which also eliminates transient induced latch-up but without the concomitant penalties associated with the dielectric isolation process. The ionizing radiation total dose hardness will exceed 1 x 10(exp6) rads (Si.)


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    Titel :

    A transient hardened junction isolated bipolar technology


    Weitere Titelangaben:

    Trennschicht-Isolation-Bipolar-Bauelement Technologie: Widerstandsfaehigkeit bei Strahleneinfluss


    Beteiligte:

    Erschienen in:

    IEEE Transactions on Nuclear Science ; 25 , 6/Dec. ; 1522-1524


    Erscheinungsdatum :

    1978


    Format / Umfang :

    3 Seiten, 1 Bild, 1 Tabelle, 3 Quellen



    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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