This paper presents the techniques used to manufacture a high performance silicon photodetector having several precisely defined photosensitive areas. The principle of the device design is based on a PIN structure. Metallic layers are used to mask paristic photosensitive areas. The metal layers are used in such a way that they do not degrade the electrical characteristics of the junction. Special care has been taken during manufacturing to assure the reliability of the product, which is to be used in a meteorological satellite.
High reliability photodiodes for space applications
Photodioden hoher Zuverlaessigkeit fuer die Raumfahrt
Microelectronics and Reliability ; 14 , 3 ; 305-307
1975
3 Seiten, 4 Bilder
Aufsatz (Zeitschrift)
Englisch
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