Abstract The time-resolved fluorescence spectrum of wide-gap semiconductors, single crystals of zinc oxide and gallium nitride, excited by nickel-like silver x-ray laser with the wavelength of 13.9 nm were observed. The streak image of fluorescence at around 380 nm and 370 nm for each samples were obtained by one-shot excitation of the x-ray laser. The fluorescence lifetimes were compared with the 351 nm excitation cases and evaluated the samples for scintillation materials of EUV lithography.


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    Titel :

    Time-Resolved Fluorescence Spectrum of Wide-Gap Semiconductors Excited by 13.9 nm X-Ray Laser


    Beteiligte:
    Tanaka, M. (Autor:in) / Furukawa, Y. (Autor:in) / Nakazato, T. (Autor:in) / Tatsumi, T. (Autor:in) / Murakami, H. (Autor:in) / Shimizu, T. (Autor:in) / Sarukura, N. (Autor:in) / Nishikino, M. (Autor:in) / Kawachi, T. (Autor:in) / Kagamitani, Y. (Autor:in)

    Erschienen in:

    X-Ray Lasers 2008 ; 7 ; 501-505


    Erscheinungsdatum :

    2009-01-01


    Format / Umfang :

    5 pages





    Medientyp :

    Aufsatz/Kapitel (Buch)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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