Abstract The time-resolved fluorescence spectrum of wide-gap semiconductors, single crystals of zinc oxide and gallium nitride, excited by nickel-like silver x-ray laser with the wavelength of 13.9 nm were observed. The streak image of fluorescence at around 380 nm and 370 nm for each samples were obtained by one-shot excitation of the x-ray laser. The fluorescence lifetimes were compared with the 351 nm excitation cases and evaluated the samples for scintillation materials of EUV lithography.
Time-Resolved Fluorescence Spectrum of Wide-Gap Semiconductors Excited by 13.9 nm X-Ray Laser
2009-01-01
5 pages
Aufsatz/Kapitel (Buch)
Elektronische Ressource
Englisch
Fluorescence Lifetime , Gallium Nitride , Short Pulse Duration , Streak Image , Japan Atomic Energy Agency Physics , Optics and Electrodynamics , Atomic, Molecular, Optical and Plasma Physics , Quantum Optics , Laser Technology, Photonics , Atoms and Molecules in Strong Fields, Laser Matter Interaction , Plasma Physics
Time-Resolved Fluorescence Spectrum of Wide-Gap Semiconductors Excited by 13.9 nm X-Ray Laser
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