The bipolar junction transistor (BJT) generates heat that can lead to thermal runaway. BJT temperature increases can affect how well this device performs. Moreover, integrated circuits (IC) consisting of large numbers of BJTs can have an adverse effect on how the device performs in aggregate. This paper discusses the BJT functionality and causes of heat generation and proposes potential solutions to this thermal problem.


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    Titel :

    Thermal Management Solutions to Advanced Integrated and Discrete Bipolar Junction (BJT) Device Structures


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:
    Mitra, Atindra K. (Autor:in) / Ramsey, Jeffry (Autor:in) / Jones, Keith W. (Autor:in)

    Kongress:

    International Conference On Environmental Systems ; 2004



    Erscheinungsdatum :

    2004-07-19




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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