This paper presents an experimental comparative study between the OCTOGONAL-Gate Silicon-on-Insulator (SOI) nMOSFET (OSM) and the conventional SOI nMOSFET (CSM) considering the same bias conditions and the same gate area (AG), in order to verify the influence of this new MOSFET layout style to handle high current for automotive modules. Analog integrated circuits (ICs) design tends to be considered an art due to a large number of variables and objectives to achieve the product specifications. The designer has to find the right tradeoffs to achieve the desired automotive specification such as low power, low voltage, high speed and high current driver. SOI MOSFET's technology is required to provide the growth of embedded electronics. This growth is driving demand for power-handling devices that are smaller yet still provide high current driver capabilities. To optimize the transistor's operation, attending the aggressive downscaling and automotive requirements, emerges the OCTO SOI nMOSFET as an alternative to answer the current driver and sizing question. In addition, this innovative layout style can provide low-power and more robustness against Electromagnetic Interference (EMI), Electro Static Discharge (ESD), according to Electromagnetic Compatibility (EMC).
Using OCTO SOI nMOSFET to Handle High Current for Automotive Modules
Sae Technical Papers
21st SAE Brasil International Congress and Exhibition ; 2012
2012-10-02
Aufsatz (Konferenz)
Englisch
Using OCTO SOI nMOSFET to Handle High Current for Automotive Modules
British Library Conference Proceedings | 2012
|41tes Stück – 43tes Stück (Mittwochs den 14. Octo. – Mittwochs den 28. Octo.)
DataCite | 1761
Rerum judicatarum centuriæ octo. By David Jenkins
GWLB - Gottfried Wilhelm Leibniz Bibliothek | 1661
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