This paper shows for the first time a comparison of commercial‐ready n‐type passivated emitter , rear totally diffused solar cells with boron (B) emitters formed by spin‐on coating, screen printing, ion implantation, and atmospheric pressure chemical vapor deposition. All the B emitter technologies show nearly same efficiency of ~20%. The optimum front grid design (5 busbars and 100 gridlines), calculated by an analytical modeling, raised the baseline cell efficiency up to 20.5% because of reduced series resistance. Along with the five busbars, rear point contacts formed by laser ablation of dielectric and physical vapor deposition Al metallization resulted in another 0.4% improvement in efficiency. As a result, 20.9% efficient n‐type passivated emitter, rear totally diffused cell was achieved in this paper. Copyright © 2016 John Wiley & Sons, Ltd. This paper showed for the first time a comparison of commercial‐ready n‐type PERT solar cells with B emitter formed by spin‐on coating, screen printing, ion implantation, and APCVD. All the B emitter technologies show nearly same efficiency of ~20%. The optimum grid design with 5 busbar and PVD contact on back resulted in another ~0.9% improvement in efficiency. As a result, we achieved large area 20.9% efficient N‐type PERT cells.


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    Titel :

    Process development and comparison of various boron emitter technologies for high‐efficiency (~21%) n‐type silicon solar cells



    Erschienen in:

    Erscheinungsdatum :

    2016




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch



    Klassifikation :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher