The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se 2 interface in high‐efficiency thin‐film solar cells was derived using X‐ray photoelectron spectroscopy, ultra‐violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se 2 system, we find an essentially flat (small‐spike) conduction band alignment (here: a conduction band offset of (0.09 ± 0.20) eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high‐efficiency Zn(O,S)‐based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH) 2 , and possibly ZnSe. Copyright © 2016 John Wiley & Sons, Ltd. The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se 2 interface in high‐efficiency thin‐film solar cells is found to exhibit a conduction band offset of 0.09 ± 0.20 eV, that is, an essentially flat (small‐spike) alignment allowing for largely unimpeded electron transfer and forming a likely basis for the success of high‐efficiency Zn(O,S)‐based chalcopyrite devices. Furthermore, evidence for multiple bonding environments of Zn and O in the Zn(O,S) film is found, including ZnO, ZnS, Zn(OH) 2 , and possibly ZnSe.


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    Titel :

    Electronic structure of the Zn(O,S)/Cu(In,Ga)Se2 thin‐film solar cell interface



    Erschienen in:

    Erscheinungsdatum :

    2016




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch



    Klassifikation :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher



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