We developed an interleaved dc/dc converter with SiC devices. We applied full‐SiC modules including MOSFETs and SBDs to the interleaved dc/dc converter to achieve a high‐power density. An SiC has a high temperature resistance, which facilitates an improvement in high‐frequency drives. We achieved a high‐power density by utilizing this high temperature resistance. We also fabricated a prototype and tested it with loads up to 65 kW.
Development of High‐Power Density Interleaved dc/dc Converter with SiC Devices
Electrical engineering in Japan ; 196 , 3
2016
Aufsatz (Zeitschrift)
Englisch
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