Method of forming thin inorganic films involves chemical vapor deposition (CVD) from single organometallic precursors. No toxic constituents, minimizes impurities, and yields films having substantially uniform crystal structure and composition. Especially suitable for depositing high-quality passivating or buffer layers of GaS on GaAs semiconductor substrates. Also applicable to formation of high-quality films for purposes other than buffering or passivation, and to different materials in which another element from same group in periodic table of elements substituted for all or portion of each element in GaS/GaAs system.


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    Titel :

    CVD Of Thin Films From Single Organometallic Precursors


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1996-03-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


    TuC3 Electroluminescence from organometallic thin films

    Campos, R. A. / Kovalev, I. / Guo, Y. et al. | British Library Conference Proceedings | 1995