Quantum efficiency of back-surface-illuminated charge-coupled device (CCD) increased by coating back surface with thin layer of PtSi or IrSi on thin layer of SiO2. In its interaction with positively-doped bulk Si of CCD, silicide/oxide layer forms Schottky barrier that repels electrons, promoting accumulation of photogenerated charge carriers in front-side CCD potential wells. Physical principle responsible for improvement explained in "Metal Film Increases CCD Output" (NPO-16815).


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Silicide Schottky Barrier For Back-Surface-Illuminated CCD


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1990-06-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




    Ni-Silicide Schottky Barrier Micropyramidal Photodetector Array

    Bidney, Grant W. / Jin, Boya / Deguzman, Lou et al. | IEEE | 2021


    Advances In Platinum Silicide Schottky-Barrier IR-CCD Image Sensors

    Kosonocky, W. F. / Erhardt, H. G. / Meray, G et al. | SPIE | 1980


    The development of back-illuminated CCD's for XMM

    Verhoeve, P.W.A.M. / Jansen, F.A. / Korte, P.A.J. de et al. | Tema Archiv | 1992



    The Development of Back-illuminated CCDs for XMM

    Verhoeve, P. W. A. M. | British Library Online Contents | 1992