Germanium (Ge) has crystallographic characteristics similar to GaAs and compatible with heteroepitaxial growth of GaAs. Further, since efficient heteroface cells already grown on thick Ge single crystals, Ge is excellent substrate candidate for thin-film cells. Required is single-crystal Ge thin film. Method developed for epitaxially growing highquality 10-um Ge thin films on ,100. NaCl substrates by plasma-enhanced chemical-vapor deposition (PECVD) and then separating Ge films by either melt-away or differential-thermal shear stress techniques. Free-standing films used for growth of AlxGa1-xAs/GaAs heteroface cells by similar techniques.
High-Quality, Thin-Film Germanium Single Crystals
NASA Tech Briefs ; 9 , 3
1986-01-01
Sonstige
Keine Angabe
Englisch
High efficiency silicon–germanium thin film solar cells using graded absorber layer
Online Contents | 2010
|Thin film solar cells based on microcrystalline silicon–germanium narrow-gap absorbers
Online Contents | 2009
|Thin film solar cells based on microcrystalline silicon–germanium narrow-gap absorbers
Online Contents | 2009
|Thin Film 2-d Photonic Crystals for High-Performance Light-Emitting Diodes
British Library Conference Proceedings | 1999
|Floating zone experiments with germanium crystals in sounding rockets
Elsevier | 1986
|