Thin buffer layer of SiC minimizes effects of lattice mismatch. Approach consists of growing single-crystal layer of cubic SiC on single-crystal silicon (Si) wafer by chemical-vapor deposition (CVD). Process developed for production of large-area single-crystal wafers of cubic silicon carbide (SiC) for semiconductor devices; also used to make devices themselves. Applications include electronics for high temperature (up to 900 C) and electronics for very high frequencies.


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    Titel :

    Making Cubic Silicon Carbide Semiconductors


    Beteiligte:
    Powell, J. (Autor:in) / Will, H. (Autor:in) / Nishino, S. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1985-04-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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