Proposed technique grows thin sheets of silicon at high speeds with minimal contamination. Films grown in novel and continuous manner without presence of substrate.
Silicon-Film Growth by Continuous Edge-Supported Melt Skimming
NASA Tech Briefs ; 8 , 2
1984-12-01
Sonstige
Keine Angabe
Englisch
Engineering Index Backfile | 1909
|Engineering Index Backfile | 1910
Hydrodynamic problems of offshore skimming systems
Tema Archiv | 1986
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