With an improved model, accelerated high-field tests can be used to predict gate-oxide breakdown in metal-oxide-semi-conductor (MOS) structures. Principal mechanism in MOS breakdown is mobile-ion emission from metal/oxide interface, which occurs during application of positive gate-bias field. Breakdown is related to clustering of emitted ions at localized defect sites in oxide/silicon interface. Using new model to interpret data, tests that normally take several weeks at low fields to accumulate sufficient statistics can be completed in only a few hours at high fields.


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    Titel :

    Improved Model for MOS Breakdown


    Beteiligte:
    Li, S. P. (Autor:in) / Maserjian, J. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1982-09-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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