Wide bandgap (WBG) semiconductors can be used at high switching frequency and have a high breakdown voltage and high junction temperature rating which make them appealing for use in power conversion. This paper sets forth a rigorous multi-objective optimization based design paradigm for a DC generation system. Using this paradigm, the loss versus mass trade-off (i.e. Pareto-optimal front) of the generation system is explored as a function of semiconductor type. The method co-designs the machine and converter. The optimization results show that the application of Silicon Carbide (SiC) can achieve a 30% mass savings at the same loss level relative to Silicon (Si) for a 10 kW application.
Optimization of a wide bandgap based generation system
2017-08-01
1144719 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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