Wide bandgap (WBG) semiconductors can be used at high switching frequency and have a high breakdown voltage and high junction temperature rating which make them appealing for use in power conversion. This paper sets forth a rigorous multi-objective optimization based design paradigm for a DC generation system. Using this paradigm, the loss versus mass trade-off (i.e. Pareto-optimal front) of the generation system is explored as a function of semiconductor type. The method co-designs the machine and converter. The optimization results show that the application of Silicon Carbide (SiC) can achieve a 30% mass savings at the same loss level relative to Silicon (Si) for a 10 kW application.


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    Titel :

    Optimization of a wide bandgap based generation system


    Beteiligte:
    Zhang, Bo (Autor:in) / Sudhoff, Scott (Autor:in) / Pekarek, Steven (Autor:in) / Neely, Jason (Autor:in)


    Erscheinungsdatum :

    2017-08-01


    Format / Umfang :

    1144719 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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