We obtained strong near-UV and blue emissions at room temperature from In-rich InGaN/GaN MQW structures. We believe that use of less than 2-nm-thick In-rich InGaN QW layer can be a new candidate for near-UV and visible sources, which might replace the conventional Ga-rich, thicker InGaN QW layer.
Strong near-ultraviolet and blue emissions at room temperature from In-rich InGaN/GaN multi-quantum well structures
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 2 ; 1447-1449 Vol. 2
2005-01-01
1525523 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2005
|Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes
British Library Online Contents | 2006
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