For the first time the performance of visible lasers operating at 633 nm is reported as function of the amount of applied strain. Varying the strain between /spl delta/a/a = -1 % and /spl delta/a/a = + 1 % two minima in threshold current density have been found and are explained.
Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm
1992-01-01
139318 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Effect of Strain on the Threshold Current of GaInP/AlGaInP Quantum Well Lasers Emitting at 633 nm
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