For the first time the performance of visible lasers operating at 633 nm is reported as function of the amount of applied strain. Varying the strain between /spl delta/a/a = -1 % and /spl delta/a/a = + 1 % two minima in threshold current density have been found and are explained.


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    Titel :

    Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm


    Beteiligte:
    Valster, A. (Autor:in) / van der Poel, C.J. (Autor:in) / Finke, M.N. (Autor:in) / Boermans, M.J.B. (Autor:in)


    Erscheinungsdatum :

    1992-01-01


    Format / Umfang :

    139318 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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