A high-Q vertical emitting AlAs/GaAs Fabry-Perot micropillar cavities are fabricated, with a new type of GaInAs quantum dots within a one /spl lambda/-cavity using high reflectivity distributed Bragg reflectors. In this paper, micropillars with a maximum quality factor of up to 34500 for a 4 /spl mu/m wide microcavity are presented.


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    Titel :

    Semiconductor quantum dot micropillar cavities for quantum electrodynamic experiments


    Beteiligte:
    Loffler, A. (Autor:in) / Hofmann, C. (Autor:in) / Reitzenstein, S. (Autor:in) / Kamp, M. (Autor:in) / Reithmaier, J.P. (Autor:in) / Forchel, A. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    270235 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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