A high-Q vertical emitting AlAs/GaAs Fabry-Perot micropillar cavities are fabricated, with a new type of GaInAs quantum dots within a one /spl lambda/-cavity using high reflectivity distributed Bragg reflectors. In this paper, micropillars with a maximum quality factor of up to 34500 for a 4 /spl mu/m wide microcavity are presented.
Semiconductor quantum dot micropillar cavities for quantum electrodynamic experiments
2005-01-01
270235 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Semiconductor Quantum Dot Micropillar Cavities for Quantum Electrodynamic Experiments
British Library Conference Proceedings | 2005
|Directional Stimulated Emission from Deformed GaN Micropillar Cavities
British Library Conference Proceedings | 1999
|Current Commutators in Quantum Electrodynamic
NTIS | 1965
|Electrodynamic tether experiments in the ionosphere
NTRS | 1983
|