The operating principles and recent results on THz lasers based on intracenter optical transitions of shallow donors in silicon under optical excitation are reviewed. The aspects of THz lasing from double donor and acceptor centers in bulk silicon as well as electrical current excitation by resonant tunneling in Si/SiGe heterostructures are discussed.


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    Titel :

    The silicon lasers based on impurity state transitions


    Beteiligte:
    Shastin, V.N. (Autor:in) / Pavlov, S.G. (Autor:in) / Zhukavin, R.Kh. (Autor:in) / Bekin, N.A. (Autor:in) / Hubers, H.-W. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    174909 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    THz silicon lasers based on donor center transitions

    Shastin, V.N. / Zhukavin, R.Kh. / Pavlov, S.G. et al. | IEEE | 2005


    THz Silicon Lasers Based on Donor Center Transitions

    Shastin, V. N. / Zhukavin, R. K. / Pavlov, S. G. et al. | British Library Conference Proceedings | 2005


    Gain in silicon lasers based on shallow donor transitions

    Zhukavin, R.Kh. / Pavlov, S.G. / Hovenier, J.N. et al. | IEEE | 2004


    Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

    Kovalevsky, K.A. / Abrosimov, N.V. / Zhukavin, R.Kh. et al. | Deutsches Zentrum für Luft- und Raumfahrt (DLR) | 2015

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