GaInAsP/InP distributed feedback lasers with quantum-wire active regions (30 nm wide) were realized by dry etching and regrowth method. A2 threshold current density as low as 176 A/cm2(Ith= 2.1 mA) was successfully achieved under the RT-CW condition.


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    Titel :

    Low Threshold Current Density Operation of GaInAsP/InP DFB Lasers Consisting of Quantum-Wire Active Regions


    Beteiligte:
    Yagi, H. (Autor:in) / Miura, K. (Autor:in) / Nishimoto, Y. (Autor:in) / Plumwongrot, D. (Autor:in) / Maruyama, T. (Autor:in) / Arai, S. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    1296744 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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