We have fabricated four distinguishable wavelength lasers ranging from 1480 nm to 1512 nm across a wafer using a direct laser writing technique. This process offers a potentially low-cost approach for integrating multiple-wavelength lasers for wavelength-division-multiplexing applications.


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    Titel :

    Fabrication of multiple-wavelength lasers in InGaAs/InGaAsP structures using direct laser writing


    Beteiligte:
    Ong, T.K. (Autor:in) / Chan, Y.C. (Autor:in) / Ooi, B.S. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    170475 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Fabrication of Multiple-Wavelength Lasers in InGaAs/InGaAsP Structures Using Direct Laser Writing

    Ong, T. K. / Chan, Y. C. / Ooi, B. S. et al. | British Library Conference Proceedings | 2001


    Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

    Ma, C. S. / Wang, L. J. / Liu, S. Y. | British Library Online Contents | 2001


    Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

    Ma, C. S. / Wang, L. J. / Liu, S. Y. | British Library Online Contents | 2001


    Auger Recombination in Strained and Unstrained InGaAs/InGaAsP Multiple Quantum Well Lasers

    Fuchs, G. / Schiedel, C. / Hangleiter, A. et al. | British Library Conference Proceedings | 1992


    Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers

    Fuchs, G. / Schiedel, C. / Hangleiter, A. et al. | IEEE | 1992