Reduction of the linewidth enhancement factor cc is demonstrated in 1.3 /spl mu/m InGaAsP/InP modulation-doped strained multiple-quantum-well lasers. A small /spl alpha/ value of less than I is obtained with positive gain.
Reduction of linewidth enhancement factor in InGaAsP/InP modulation-doped strained multiple-quantum-well lasers
1992-01-01
154985 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1992
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