Optically pumped THz emission has been observed in a wide range of semiconductors, and this process is an important practical source of pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to significantly enhance THz emission compared with a bare GaAs surface.


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    Titel :

    Enhanced Terahertz Emission from InAs Quantum Dots on GaAs


    Beteiligte:
    Park, H. (Autor:in) / Kim, J. (Autor:in) / Moon, K. (Autor:in) / Han, H. (Autor:in) / Choi, W. J. (Autor:in) / Lee, J. I. (Autor:in)


    Erscheinungsdatum :

    2006-09-01


    Format / Umfang :

    1240955 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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