Complete formation regarding the distribution of growth quality, defect state, and piezoelectric field in lateral-over-grown GaN can be obtained simultaneously through multi-photon (4 and 3) and multi-harmonic (3 and 2) microscopy.
3D four- three- two-photon and multi-harmonic microscopy of lateral-over-grown GaN
2003-01-01
77699 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
3D four- three- two-photon and multi-harmonic microscopy of lateral-over- grown GaN
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