A new lithographically defined self-aligned index- and current-confined all-epitaxial GaAs-based VCSEL is demonstrated. The new VCSEL is based on epitaxial regrowth, except that it also uses an intracavity phase-shifting mesa to obtain mode-confinement.
All-epitaxial current- and mode-confined AlGaAs/GaAs vertical-cavity surface-emitting laser
2004-01-01
104602 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
All-Epitaxial Current- and Mode-Confined AlGaAs/GaAs Vertical-Cavity Surface-Emitting Laser
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