A new lithographically defined self-aligned index- and current-confined all-epitaxial GaAs-based VCSEL is demonstrated. The new VCSEL is based on epitaxial regrowth, except that it also uses an intracavity phase-shifting mesa to obtain mode-confinement.


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    Titel :

    All-epitaxial current- and mode-confined AlGaAs/GaAs vertical-cavity surface-emitting laser


    Beteiligte:
    Lu, D. (Autor:in) / Ahn, J. (Autor:in) / Deppe, D.G. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    104602 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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