Spatially coherent vertical emission is demonstrated in an electrically pumped InGaN/GaN MQW laser with 4/sup th/ order surface gratings defined by Focused Ion Beam etching, with vertical output power 6 times above scattering background levels.


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    Titel :

    InGaN/GaN MQW laser diodes with 4/sup th/ order FIB-etched gratings


    Beteiligte:
    Sanz, D.C. (Autor:in) / Rorison, J.M. (Autor:in) / Yu, S. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    1243741 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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