Spatially coherent vertical emission is demonstrated in an electrically pumped InGaN/GaN MQW laser with 4/sup th/ order surface gratings defined by Focused Ion Beam etching, with vertical output power 6 times above scattering background levels.
InGaN/GaN MQW laser diodes with 4/sup th/ order FIB-etched gratings
2005 Quantum Electronics and Laser Science Conference ; 2 ; 1023-1025 Vol. 2
2005-01-01
1243741 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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