GaN-based electroluminescent devices were fabricated on aluminum substrates at the low-temperature less than 500°C. Purplish-blue emission was observed from the devices driven under pulsed voltage. The aluminum substrate is effective to realize their long lifetime.
GaN films deposited at low temperature on Al substrates by compound source molecular beam deposition for electroluminescent devices
2005-01-01
170134 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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