GaN-based electroluminescent devices were fabricated on aluminum substrates at the low-temperature less than 500°C. Purplish-blue emission was observed from the devices driven under pulsed voltage. The aluminum substrate is effective to realize their long lifetime.


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    Titel :

    GaN films deposited at low temperature on Al substrates by compound source molecular beam deposition for electroluminescent devices


    Beteiligte:
    Egawa, S. (Autor:in) / Honda, T. (Autor:in) / Obinata, N. (Autor:in) / Sugimoto, K. (Autor:in) / Kawanishi, H. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    170134 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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